2sc2216,2SC2717 2003-03-27 1 toshiba transistor silicon npn epitaxial planar type 2sc2216,2SC2717 tv final picture if amplifier applications high gain: g pe = 33db (typ.) (f = 45 mhz) good linearity of h fe . maximum ratings (ta 25c) characteristics symbol rating unit 2sc2216 50 collector-base voltage 2SC2717 v cbo 30 v 2sc2216 45 collector-emitter voltage 2SC2717 v ceo 25 v emitter-base voltage v ebo 4 v collector current i c 50 ma emitter current i e 50 ma collector power dissipation p c 300 mw junction temperature t j 125 c storage temperature range t stg 55~125 c electrical characteristics (ta 25c) characteristics symbol test condition min typ. max unit 2sc2216 v cb 50 v, i e 0 collector cut-off current 2SC2717 i cbo v cb 30 v, i e 0 0.1 a emitter cut-off current i ebo v eb 3 v, i c 0 0.1 a 2sc2216 45 collector-emitter breakdown voltage 2SC2717 v (br) ceo i c 10 ma, i b 0 25 v 2sc2216 40 140 dc current gain 2SC2717 h fe v ce 12.5 v, i c 12.5 ma 40 240 collector-emitter saturation voltage v ce (sat) i c 15 ma, i b 1.5 ma 0.2 v base-emitter saturation voltage v be (sat) i c 15 ma, i b 1.5 ma 1.5 v collector output capacitance c ob v cb 10 v, i e 0, f 30 mhz 0.8 2.0 pf collector-base time constant c c ? rbb? v cb 10 v, i e 1 ma, f 30 mhz 25 ps transition frequency f t v ce 12.5 v, i c 12.5 ma 300 mhz 2sc2216 29 36 power gain (figure 1) 2SC2717 g pe v cc 12.5 v, i e 12.5 ma, f 45 mhz 28 36 db unit: mm jedec to-92 jeita sc-43 toshiba 2-5f1e weight: 0.21 g (typ.)
2sc2216,2SC2717 2003-03-27 2 figure 1 45 mhz g pe test circuit
2sc2216,2SC2717 2003-03-27 3
2sc2216,2SC2717 2003-03-27 4
2sc2216,2SC2717 2003-03-27 5 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707ea a restrictions on product use
|
